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DEVICE PERFORMANCE OF POLY-Si THIN-FILM TRANSISTORS FABRICATED ON YSZ CRYSTALLIZATION-INDUCTION LAYER VIA A TWO-STEP IRRADIATION METHOD USING PULSED LASER
Corresponding Author(s) : Mai Thi Kieu Lien
UED Journal of Social Sciences, Humanities and Education,
Vol. 7 No. 5 (2017): UED JOURNAL OF SOCIAL SCIENCES, HUMANITIES AND EDUCATION
Abstract
In this study, we fabricated and investigated device performance of poly-Si thin-film transistors (TFTs) via a two-step pulsed-laser annealing (PLA) method on two kinds of substrates namely glass and YSZ*/glass. It was found that TFTs on YSZ/glass exhibited much better performance and uniformity among devices, e.g., they showed an average mobility of ~80 cm2/Vs and standard deviation of ~18 cm2/Vs, respectively, compared with ~40 cm2/Vs and ~28 cm2/Vs of TFTs on glass substrates, respectively. This result can be attributed to the better crystalline quality of the Si film on the YSZ/glass and the uniform distribution of grains as well as crystalline defects, which demonstrates the effectiveness of the crystallization-induction effect of the YSZ layer. (*YSZ: Yttria-Stabilized Zirconia)
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[1] T. Sameshima, S. Usui, and M. Sekiya (1986). XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's. IEEE Electron Device Lett. 7, 276-278.
[2] S. Uchikoga and N. Ibaraki (2001). Low temperature poly-Si TFT-LCD by excimer laser anneal. Thin Solid Films 383, 19-24.
[3] A. Hara, K. Kitahara, K. Nakajima, and M. Okabe (1999). A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies. Jpn. J. Appl. Phys. 38, 6624-6628.
[4] S. Horita and H. Sukreen (2009). Low Temperature Deposition and Crystallization of Silicon Film on an HF-Etched Polycrystalline Yttria-Stabilized Zirconia Layer Rinsed with Ethanol Solution. Appl. Phys. Express 2, 041201, 1-3.
[5] S. Horita and S. Hana (2010). Low-Temperature Crystallization of Silicon Films Directly Deposited on Glass Substrates Covered with Yttria-Stabilized Zirconia Layers. Jpn. J. Appl. Phys. 49, 105801, 1-11.
[6] M. T. K. Lien and S. Horita (2013). Improving Crystalline Quality of Si Thin Films Solid-Phase Crystallized on Yttria-Stablized Zirconia Layers by Pulse Lase. Proc. IDW’13, 655-656.
[7] M. T. K. Lien and S. Horita (2014). Raman spectral analysis of Si films solid-phase-crystallized on glass substrates using pulse laser with crystallization-induction layers of yttria-stabilized zirconia. Jpn. J. Appl. Phys. 53, 03CB01, 1-7.
[8] M. T. K. Lien and S. Horita (2014). Application of Two-Step Irradiation Method to a Large Area for Pulsed-Laser Crystallized Poly-Si Thin Films on YSZ. Proc. TFMD’ 14, 90-93.
[9] M. T. K. Lien and S. Horita (2014). Area Expansion of Crystallized Si Films on YSZ Layers by Two-step Method in PLA. Proc. IDW’ 14, 259-260.
[10] M. T. K. Lien and S. Horita (2015). Improving crystalline quality of polycrystalline silicon thin films crystallized on yttria-stabilized zirconia crystallization-induction layers by the two-step irradiation method of pulsed laser annealing. Jpn. J. Appl. Phys. 54, 03CA01, 1-8.
[11] M. T. K. Lien and S. Horita (2016). Material properties of pulsed-laser crystallized Si thin films grown on yttria-stabilized zirconia crystallization-induction layers by two-step irradiation method. Jpn. J. Appl. Phys. 55, 03CB02, 1-8.