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Submitted
Jul 17, 2020
Published
Nov 7, 2019
FABRICATING BARIUM DISILICIDE THIN-FILMS ON GERMANIUM SUBSTRATE AND INVESTIGATING SOME OF ITS PROPERTIES
Corresponding Author(s) : Mai Thi Kieu Lien
mtklien@ued.udn.vn
UED Journal of Social Sciences, Humanities and Education,
Vol. 9 No. 4 (2019): UED JOURNAL OF SOCIAL SCIENCES, HUMANITIES AND EDUCATION
Abstract
BaSi2 thin-films were fabricated by thermal evaporation method on flat and modified Ge substrates with various etching times te. Continuing with the previous study, the crystalline properties and minority carrier-lifetimes τ in BaSi2 thin-films were investigated respectively. The obtained results showed that, the film quality slightly degrades toward the film surface. τ of the BaSi2 films grown on modified substrates are longer than those on flat substrate and reaches 3.17 µs at te = 15 mins. This is the highest value obtained while measuring the thin BaSi2 films (thickness < 300 nm) evaporating and condensing onto various substrates. The results obtained in this study contribute to strengthening the conclusions about the optimal etching time in the previous study. Photoluminescence spectra of BaSi2 films on Ge substraes showed that BaSi2 film deposited on modified substrate with te = 15 mins has better crystalline quality than that on the flat one. The experimental bandgap of BaSi2 thin-films was deduced, reaching the value of 1.17-1.2 eV.
Keywords
Barium disilicide; Silicide semiconductor; Thermal evaporation; Substrate modification; photoluminescence; carrier lifetime.
Mai Thi Kieu Lien. (2019). FABRICATING BARIUM DISILICIDE THIN-FILMS ON GERMANIUM SUBSTRATE AND INVESTIGATING SOME OF ITS PROPERTIES. UED Journal of Social Sciences, Humanities and Education, 9(4), 7-13. https://doi.org/10.47393/jshe.v9i4.107
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References
-
[1] J. Evers and A. Weiss (1974). Electrical properties of alkaline earth disilicides and digermanides. Mater. Res. Bull, 9, 549-553.
[2] T. Nakamura, T. Suemasu, K. Takakura, F. Hasegawa, A. Wakahara and M. Imai (2002). Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations. Appl. Phys. Lett, 81, 1032-1034.
[3] L. I. Ivanenko, V. L. Shaposhnikov, A. B. Filonov, A. V. Krivosheeva, V. E. Borisenko, D. B. Migas, L. Miglio, G. Behr, and J. Schumann (2004). Electronic properties of semiconducting silicides: Fundamentals and recent predictions. Thin Solid Films, 461, 141-147.
[4] K. Morita, Y. Inomata, and T. Suemasu (2006). Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy. Thin Solid Films, 508, 363-366.
[5] S. Kishino, T. Imai, T. Iida, Y. Nakaishi, M. Shinada, Y. Takanashi, and N. Hamada (2007). Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method. J. Alloys Compd, 428, 22-27.
[6] K. Toh, T. Saito, and T. Suemasu (2011). Optical absorption properties of BaSi2 epitaxial films grown on a transparent silicon-on-insulator substrate using molecular beam epitaxy. Jpn. J. Appl. Phys, 50, 68001.
[7] K. O. Hara, Y. Nakagawa, T. Suemasu, and N. Usami (2015). Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications. Jpn. J. Appl. Phys, 54, 07JE02.
[8] M. Baba, K. Toh, K. Toko, N. Saito, N. Yoshizawa, K. Jiptner, T. Sekiguchi, K. O. Hara, N. Usami, and T. Suemasu (2012). Investigation of grain boundaries in BaSi2 epitaxial films on Si (111) substrates using transmission electron microscopy and electron-beam-induced current technique. J. Cryst. Growth, 348, 75-79.
[9] K.O. Hara, N. Usami, K. Nakamura, R. Takabe, M. Baba, K. Toko, and T. Suemasu (2013). Determination of bulk minority-carrier lifetime in BaSi2 earth-abundant absorber films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing. Appl. Phys. Express, 6.
[10] R.A. McKee, F.J. Walker, J.R. Conner, and R. Raj (1993). BaSi2 and thin film alkaline earth silicides on silicon. Appl. Phys. Lett, 63, 2818-2820.
[11] H.H. Weitering (1996). New barium-induced surface reconstructions on Si (111). Surf. Sci, 355, L271-L277.
[12] Y. Inomata, T. Nakamura, T. Suemasu, and F. Hasegawa (2004). Epitaxial growth of semiconducting BaSi2 thin films on Si (111) substrates by reactive deposition epitaxy. Jpn. J. Appl. Phys, 43, 4155–4156.
[13] K. Toh, K.O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko, and T. Suemasu (2012). Molecular beam epitaxy of BaSi2 thin films on Si (001) substrates. J. Cryst. Growth, 345, 16–21.
[14] M. Baba, K. Nakamura, W. Du, M.A. Khan, S. Koike, K. Toko, N. Usami, N. Saito, N. Yoshizawa, and T. Suemasu (2012). Molecular beam epitaxy of BaSi2 films with grain size over 4 μm on Si (111). Jpn. J. Appl. Phys, 51, 098003.
[15] R. Takabe, K. Nakamura, M. Baba, W. Du, M.A. Khan, K. Toko, M. Sasase, K.O. Hara, N. Usami, and T. Suemasu (2014). Fabrication and characterization of BaSi2 epitaxial films over 1 μm in thickness on Si (111). Jpn. J. Appl. Phys, 53, 04ER04.
[16] R. Takabe, S. Yachi, D. Tsukahara, K. Toko, and T. Suemasu (2017). Growth of BaSi2 continuous films on Ge (111) by molecular beam epitaxy and fabrication of p-BaSi2 /n-Ge heterojunction solar cells. Jpn. J. Appl. Phys, 56, 05DB02.
[17] Z. Yang, Z. Hao, and Q. Xie (2011). Effects of annealing temperature on the structure and surface feature of BaSi2 films grown on Si (111) substrates. Phys. Procedia 11, 118-121.
[18] T. Yoneyama, A. Okada, M. Suzuno, T. Shibutami, K. Matsumaru, N. Saito, N. Yoshizawa, K. Toko, and T. Suemasu (2013). Formation of polycrystalline BaSi2 films by radio-frequency magnetron sputtering for thin-film solar cell applications. Thin Solid Films, 534, 116-119.
[19] N.A.A. Latiff, T. Yoneyama, T. Shibutami, K. Matsumaru, K. Toko, and T. Suemasu (2013). Fabrication and characterization of polycrystalline BaSi2 by RF sputtering. Phys. Status Solidi C, 10, 1759-1761.
[20] R. Alvarez, J.M. Garcia-Martin, M.C. Lopez-Santos, V. Rico, F.J. Ferrer, J. Cotrino, A.R. Gonzalez-Elipe, and A. Palmero (2014). On the deposition rates of magnetron sputtered thin films at oblique angles. Plasma Process. Polym, 11, 571-576.
[21] Y. Nakagwa, K.O. Hara, T. Suemasu, and N. Usami (2015). Fabrication of single-phase BaSi2 thin films on silicon substrates by vacuum evaporation for solar cell applications. Jpn. J. Appl. Phys., 54, 08KC03.
[22] Y. Nakagawa, K.O. Hara, T. Suemasu, and N. Usami (2016). On the mechanism of BaSi2 thin film formation on Si substrate by vacuum evaporation. Procedia Eng, 141, 23-26.
[23] K.O. Hara, J. Yamanaka, K. Arimoto, K. Nakagawa, T. Suemasu, and N. Usami (2015). Structural and electrical characterizations of crack-free BaSi2 thin films fabricated by thermal evaporation. Thin Solid Films, 595, 68-72.
[24] C.T. Trinh, Y. Nakagawa, K.O. Hara, R. Takabe, T. Suemasu, and N. Usami (2016). Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation. Mater. Res. Express, 3, 76204.
[25] C.T. Trinh, Y. Nakagawa, K.O. Hara, Y. Kurokawa, R. Takabe, T. Suemasu, and N. Usami (2017). Growth of BaSi2 film on Ge (100) by vacuum evaporation and its photoresponse properties. Jpn. J. Appl. Phys., 56, 05DB06.
[26] M. T. K. Lien (2019). Effect of substrate modification on properties of thermally evaporated barium disilicide thin-films. Journal of Science, The University of Danang-University of Science and Education (accepted).
[27] K.O. Hara, N. Usami, K. Toh, M. Baba, K. Toko, and T. Suemasu (2012). Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon. J. Appl. Phys, 112, 083108.
[28] Y.F. Liao, Q. Xie, Q.Q. Xiao, Q. Chen, M.H. Fan, J. Xie, J. Huang, J.M. Zhang, R. Ma, S.L. Wang, H.X. Wu, and D. Fang (2017). Photoluminescence of Mg2Si films fabricated by magnetron sputtering. Applied Surface Science, 403, 302-307.
[29] Y. Yamamoto, M.R. Barget, G. Capellini, N. Taoka, M. Virgilio, P. Zaumseil, A. Hesse, T. Schroeder, and B. Tillack (2017). Photoluminescence of phosphorous doped Ge on Si (100). Materials Science in Semiconductor Processing, 70, 111–116.
[30] K. Morita, Y. Inomata, and T. Suemasu (2006). Optical and electrical properties of semiconducting thin films on Si substrates grown by molecular beam epitaxy. Thin Solid Films, 508, 363.
[31] T. Suemasu, T. Saito, K. Toh, A. Okada, and M.A. Khan (2011). Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells. Thin Solid Films, 519, 8501.
[32] Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, and T. Suemasu (2009). Photoresponse properties of semiconducting BaSi2 epitaxial films grown on Si (111) substrates by molecular beam epitaxy. App. Phys. Express, 2, 021101.